The metal contacts on 2D black phosphorus field-effect transistor andphotodetectors are studied. The metal work functions can significantly impactthe Schottky barrier at the metal-semiconductor contact in black phosphorusdevices. Higher metal work functions lead to larger output hole currents inp-type transistors, while ambipolar characteristics can be observed with lowerwork function metals. Photodetectors with record high photoresponsivity (223mA/W) are demonstrated on black phosphorus through contact-engineering.
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